The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots

  • Kim, Sunghoon; 
  • Park, Jaehyun; 
  • Kim, Sungwoo; 
  • Jung, Won; 
  • Sung, Jaeyoung; 
  • 외 1명
Citations

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초록

New type-II structures of CdSe/InP and InP/CdSe core-shell nanocrystals which have staggered bandgap alignment were fabricated. Using a simple model for the wave function for electrons and holes in InP/CdSe and CdSe/InP core/shell nanocrystals showed the wave function of the electron and hole spread into the shell, respectively. The probability density of the InP/CdSe and CdSe/InP core/shell QDs also showed a similar tendency. As a result, the structure exhibits increased delocalization of electrons and holes, leading to a red-shift in absorption and emission. Quantum yield increased in the InP/CdSe, however decreased in the CdSe/InP. The reason may be due to the surface trap and high activation barrier for de-trapping in the InP shell. (C) 2010 Elsevier Inc. All rights reserved.

키워드

Type-II quantum dots; Core-shell; InP; CdSe; Bandgap; CORE-SHELL NANOCRYSTALS; HIGH-QUALITY INP; INP/ZNS NANOCRYSTALS; RAPID SYNTHESIS; PHOTOPHYSICS; GROWTH
제목
The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots
저자
Kim, Sunghoon; Park, Jaehyun; Kim, Sungwoo; Jung, Won; Sung, Jaeyoung; Kim, Sang-Wook
DOI
10.1016/j.jcis.2010.03.030
발행일
2010-06
유형
Article
저널명
Journal of Colloid and Interface Science
권
346
호
2
페이지
347 ~ 351