상세 보기
The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots
- Kim, Sunghoon;
- Park, Jaehyun;
- Kim, Sungwoo;
- Jung, Won;
- Sung, Jaeyoung;
- 외 1명
WEB OF SCIENCE
12SCOPUS
13초록
New type-II structures of CdSe/InP and InP/CdSe core-shell nanocrystals which have staggered bandgap alignment were fabricated. Using a simple model for the wave function for electrons and holes in InP/CdSe and CdSe/InP core/shell nanocrystals showed the wave function of the electron and hole spread into the shell, respectively. The probability density of the InP/CdSe and CdSe/InP core/shell QDs also showed a similar tendency. As a result, the structure exhibits increased delocalization of electrons and holes, leading to a red-shift in absorption and emission. Quantum yield increased in the InP/CdSe, however decreased in the CdSe/InP. The reason may be due to the surface trap and high activation barrier for de-trapping in the InP shell. (C) 2010 Elsevier Inc. All rights reserved.
키워드
- 제목
- The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots
- 저자
- Kim, Sunghoon; Park, Jaehyun; Kim, Sungwoo; Jung, Won; Sung, Jaeyoung; Kim, Sang-Wook
- 발행일
- 2010-06
- 유형
- Article
- 권
- 346
- 호
- 2
- 페이지
- 347 ~ 351
- 언어
- ENG
- 출판사
- ACADEMIC PRESS INC ELSEVIER SCIENCE
- 발행국가
- 미국
- 분량
- 5 페이지
- ISSN
- E 1095-7103
P 0021-9797