ScholarWorks@중앙대학교

초록

Compared to binary systems, ternary thin-film transistors (TTFTs) can provide higher data density and efficiency by enabling three distinct drain current stages. However, existing TTFTs often require complex designs and are limited in material choices. Here, we present metal-insulator-transition (MIT)-induced TTFTs that integrate VO2 nanocrystal (NC) thin films with MIT properties and CdSe or PbS NC thin films. The MIT characteristics introduce a metal-insulator-metal sequence, enabling three distinct current regions and intermediate current levels. MIT-TTFTs exhibit low negative differential transconductance and maintain high stability across all three drain current stages. Fabricated on a single substrate (SiO2/Si wafer) using colloidal NCs, these devices offer a simple manufacturing process and minimal volume loss. This approach enhances gate voltage control and material compatibility, paving the way for next-generation ternary-logic systems with improved structural designs and commercialization potential. © 2025 The Authors

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