Write-Once-Read-Many-Times (WORM) biomemory device consisting of cysteine modified ferredoxin

Citations

WEB OF SCIENCE

13

초록

A biomemory device consisting of cysteine modified ferredoxin molecules, which possess a memory effect via a charge transfer mechanism, was developed. Cysteine residue was modified in Rhodobacter sphaeroides ferredoxin by site-directed mutagenesis method to directly coordinate with the gold surface without use of any additional linkers. Experiments for the effect of temperature and multiple times reading of the stored charge were conducted to realize a protein based memory device. The electric switching measurements on the device exhibited tristable switching for charge 'write' 'read' and 'erase' functions. The conductance-temperature dependent switching experiments allowed the device operation up to 320 K. The key performance of the present device is it enables multiple times reading of the stored charge. Finally, the device showed the retention time >2 weeks and can be switched >10(4) times without degradation in performance. (C) 2009 Elsevier B.V. All rights reserved.

키워드

Ferredoxin; Electron transfer; Atomic force microscopy; Electrochemical; WORM; Nanobiochip; THERMODYNAMICS; AZURIN
제목
Write-Once-Read-Many-Times (WORM) biomemory device consisting of cysteine modified ferredoxin
저자
Yagati, Ajay Kumar; Kim, Sang-Uk; Min, Junhong; Choi, Jeong-Woo
DOI
10.1016/j.elecom.2009.02.014
발행일
2009-04
유형
Article
저널명
Electrochemistry Communications
권
11
호
4
페이지
854 ~ 858