Microwave Annealing Effects on Spin-Coated Al Doped ZnO Transparent Conducting Oxides Thin Films

초록

The coexistence of electrical conductivity and optical transmittance is very important issue for the transparent conducting oxide applications. Low temperature annealing process has significant meaning for the compatibility with other electronic materials and devices. Microwave annealing process was proposed to enhance the electrical conductivity properties. 1 similar to 2.5 mole% Al dopant was employed to ZnO thin films to improve the electrical and optical properties. Spin coating process was employed to fabricate the transparent thin films. Microwave annealing process was performed to enhance the electrical and optical properties. Microwave annealed Al doped ZnO thin films showed decreased sheet resistance and higher figure of merits.

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