상세 보기

이상권 프로필 사진

이상권

Lee, Sang Kwon

자연과학대학

물리학과

연도별 연구 활동 현황

전체 236건 중 221번부터 230번까지의 결과를 표시합니다.

2003

Article

Single-crystal gallium nitride nanotubes

2002

Article

Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Article

Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide

Article

Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

Article

Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide

Article

Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors

Article

Electrical characterization of titanium-based ohmic contacts to 4H-Silicon carbide for high-power and high-temperature operation

Article

Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide

2001

Article

Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky diode characterization

Article

Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide

상세 보기

이상권

자료유형

발행연도

키워드

언어

Single-crystal gallium nitride nanotubes

Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide

Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide

Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors

Electrical characterization of titanium-based ohmic contacts to 4H-Silicon carbide for high-power and high-temperature operation

Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide

Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky diode characterization

Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide