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김민휘
Kim, Min Hwi
창의ICT공과대학
전자전기공학부
연구분야
- Devices and Circuits for Practical Neuromorphic System,
- High-speed and Low-power Memory Array,
- Next Generation Memory Devices
자료 필터
자료유형
발행연도
2014 ~ 2026
2014 2026
키워드
언어
전체 72건 중 31번부터 40번까지의 결과를 표시합니다.
2020
Article
HfOx-based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application
- Lee, Dong Keun ;
- Kim, Min-Hwi ;
- Bang, Suhyun ;
- Kim, Tae-Hyeon ;
- Choi, Yeon-Joon ;
- 외 3명
- 2020-05
- Semiconductor Science and Technology
- IOP PUBLISHING LTD
Article
Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM
- Hong, Kyungho ;
- Min, Kyung Kyu ;
- Kim, Min-Hwi ;
- Bang, Suhyun ;
- Kim, Tae-Hyeon ;
- 외 7명
- 2020-04
- IEEE Transactions on Electron Devices
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation
- Choi, Yeon-Joon ;
- Kim, Min-Hwi ;
- Bang, Suhyun ;
- Kim, Tae-Hyeon ;
- Lee, Dong Keun ;
- 외 5명
- 2020
- IEEE Access
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Validation of Spiking Neural Networks Using Resistive-Switching Synaptic Device with SpikeRate-Dependent Plasticity
- Bang, Suhyun ;
- Oh, Min-Hye ;
- Kim, Min-Hwi ;
- Kim, Tae-Hyeon ;
- Lee, Dong Keun ;
- 외 6명
- 2020
- 2020 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC)
- IEEE
Article
Fabrication and Characterization of TiOx Memristor for Synaptic Device Application
- Kim, Tae-Hyeon ;
- Kim, Min-Hwi ;
- Bang, Suhyun ;
- Lee, Dong Keun ;
- Kim, Sungjun ;
- 외 2명
- 2020
- IEEE Transactions on Nanotechnology
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2019
Article
Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices
- Mahata, Chandreswar ;
- Kim, Wonwoo ;
- Kim, Shiwhan ;
- Ismail, Muhammad ;
- Kim, Min-Hwi ;
- 외 2명
- 2019-08
- IEICE Electronics Express
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Article
Resistive random-access memory with an a-Si/SiNx double-layer
- Kwon, Hui Tae ;
- Lee, Won Joo ;
- Choi, Hyun-Seok ;
- Wee, Daehoon ;
- Park, Yu Jeong ;
- ... Kim, Min-Hwi ;
- 외 4명
- 2019-08
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
Article
SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory
- Mahata, Chandreswar ;
- Kim, Min-Hwi ;
- Bang, Suhyun ;
- Kim, Tae-Hyeon ;
- Lee, Dong Keun ;
- 외 3명
- 2019-05
- Applied Physics Letters
- AMER INST PHYSICS
Article
Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation
- Lee, Dong Keun ;
- Kim, Min-Hwi ;
- Kim, Tae-Hyeon ;
- Bang, Suhyun ;
- Choi, Yeon-Joon ;
- 외 3명
- 2019-04
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
Article
Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling
- Lee, Jae Yoon ;
- Kim, Youngmin ;
- Kim, Min-Hwi ;
- Go, Seoyeon ;
- Ryu, Seung Wook ;
- 외 5명
- 2019-03
- Vacuum
- PERGAMON-ELSEVIER SCIENCE LTD