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김민휘
Kim, Min Hwi
창의ICT공과대학
전자전기공학부
연구분야
- Devices and Circuits for Practical Neuromorphic System,
- High-speed and Low-power Memory Array,
- Next Generation Memory Devices
자료 필터
자료유형
발행연도
2014 ~ 2026
2014 2026
키워드
언어
전체 72건 중 41번부터 50번까지의 결과를 표시합니다.
2019
Article
Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
- Kim, Sungjun ;
- Chen, Jia ;
- Chen, Ying-Chen ;
- Kim, Min-Hwi ;
- Kim, Hyungjin ;
- 외 7명
- 2019-01
- Nanoscale
- ROYAL SOC CHEMISTRY
Article
Improved Gradual Reset Phenomenon in SiNx-based RRAM by Diode-Connected Structure
- Kim, Min-Hwi ;
- Bang, Suhyun ;
- Kim, Tae-Hyeon ;
- Lee, Dong Keun ;
- Kim, Sungjun ;
- 외 2명
- 2019
- 2019 SILICON NANOELECTRONICS WORKSHOP (SNW)
- IEEE
Article
Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses
- Lee, Dong Keun ;
- Kim, Min-Hwi ;
- Bang, Suhyun ;
- Kim, Tae-Hyeon ;
- Choi, Yeon-Joon ;
- 외 3명
- 2019
- 2019 SILICON NANOELECTRONICS WORKSHOP (SNW)
- IEEE
2018
Article
Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application
- Bang, Suhyun ;
- Kim, Min-Hwi ;
- Kim, Tae-Hyeon ;
- Lee, Dong Keun ;
- Kim, Sungjun ;
- 외 2명
- 2018-12
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
Article
Concurrent events of memory and threshold switching in Ag/SiNx/Si devices
- Kim, Sungjun ;
- Kim, Min-Hwi ;
- Kim, Tae-Hyeon ;
- Chen, Ying-Chen ;
- Chang, Yao-Feng ;
- 외 4명
- 2018-09
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
- A V S AMER INST PHYSICS
Article
Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory
- Kim, Sungjun ;
- Lin, Chih-Yang ;
- Kim, Tae-Hyeon ;
- Kim, Min-Hwi ;
- Kim, Hyungjin ;
- 외 3명
- 2018-08
- Nanoscale Research Letters
- SPRINGEROPEN
Article
Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current
- Kim, Min-Hwi ;
- Kim, Sungjun ;
- Bang, Suhyun ;
- Kim, Tae-Hyeon ;
- Lee, Dong Keun ;
- 외 2명
- 2018-07
- IEEE Transactions on Nanotechnology
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate
- Kim, Sungjun ;
- Jung, Sunghun ;
- Kim, Min-Hwi ;
- Chen, Ying-Chen ;
- Chang, Yao-Feng ;
- 외 4명
- 2018-05
- Small
- WILEY-V C H VERLAG GMBH
Article
Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model
- Kim, Min-Hwi ;
- Kim, Sungjun ;
- Ryoo, Kyung-Chang ;
- Cho, Seongjae ;
- Park, Byung-Gook
- 2018-03
- Journal of Computational Electronics
- SPRINGER
Article
Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device
- Kim, Tae-Hyeon ;
- Kim, Sungjun ;
- Kim, Hyungjin ;
- Kim, Min-Hwi ;
- Bang, Suhyun ;
- 외 2명
- 2018-02
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD