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김민휘
Kim, Min Hwi
창의ICT공과대학
전자전기공학부
연구분야
- Devices and Circuits for Practical Neuromorphic System,
- High-speed and Low-power Memory Array,
- Next Generation Memory Devices
자료 필터
자료유형
발행연도
2014 ~ 2026
2014 2026
키워드
언어
전체 72건 중 61번부터 70번까지의 결과를 표시합니다.
2017
Article
Uniformity Improvement of SiNx-based Resistive Switching Memory by Suppressed Internal Overshoot Current
- Kim, Min-Hwi ;
- Kim, Sungjun ;
- Bang, Suhyun ;
- Kim, Tae-Hyeon ;
- Lee, Dong Keun ;
- 외 3명
- 2017
- 2017 SILICON NANOELECTRONICS WORKSHOP (SNW)
- IEEE
Article
Investigation on the RRAM Overshoot Current Suppression with Circuit Simulation
- Bang, Suyun ;
- Kim, Sungjun ;
- Kim, Min-Hwi ;
- Kim, Tae-Hyeon ;
- Lee, Dong Keun ;
- 외 1명
- 2017
- 2017 SILICON NANOELECTRONICS WORKSHOP (SNW)
- IEEE
Article
Characterization of Resistive Switching Memory Devices with Tunnel Barrier
- Kim, Sungjun ;
- Kim, Min-Hwi ;
- Kim, Tae-Hyeon ;
- Bang, Suhyun ;
- Lee, Dong Keun ;
- 외 2명
- 2017
- 2017 SILICON NANOELECTRONICS WORKSHOP (SNW)
- IEEE
Article
Fabrication of Nano-Wedge Resistive Switching Memory and Analysis on Its Switching Characteristics
- Lee, Dong Keun ;
- Kim, Sungjun ;
- Kim, Min-Hwi ;
- Bang, Suhyun ;
- Kim, Tae-Hyeon ;
- 외 1명
- 2017
- 2017 SILICON NANOELECTRONICS WORKSHOP (SNW)
- IEEE
2016
Article
Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure
- Kim, Sungjun ;
- Kim, Min-Hwi ;
- Kim, Tae-Hyeon ;
- Cho, Seongjae ;
- Park, Byung-Gook
- 2016-11
- Journal of Alloys and Compounds
- ELSEVIER SCIENCE SA
Article
Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell
- Kim, Sungjun ;
- Kim, Min-Hwi ;
- Cho, Seongjae ;
- Park, Byung-Gook
- 2016-05
- IEICE Transactions on Electronics
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Article
Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications
- Kim, Sungjun ;
- Kim, Hyungjin ;
- Jung, Sunghun ;
- Kim, Min-Hwi ;
- Lee, Sang-Ho ;
- 외 2명
- 2016-04
- Journal of Alloys and Compounds
- ELSEVIER SCIENCE SA
2015
Article
Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications
- Kim, Sungjun ;
- Jung, Sunghun ;
- Kim, Min-Hwi ;
- Cho, Seongjae ;
- Park, Byung-Gook
- 2015-12
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
Article
Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals
- Kim, Sungjun ;
- Jung, Sunghun ;
- Kim, Min-Hwi ;
- Cho, Seongjae ;
- Park, Byung-Gook
- 2015-05
- IEICE Transactions on Electronics
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Article
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
- Kim, Sungjun ;
- Jung, Sunghun ;
- Kim, Min-Hwi ;
- Cho, Seongjae ;
- Park, Byung-Gook
- 2015-05
- Applied Physics Letters
- AMER INST PHYSICS