권혁인 프로필 사진

권혁인

Kwon, Hyuck In

창의ICT공과대학

전자전기공학부

Scopus ORCID

자료 필터

자료유형

발행연도

2008 ~ 2026
2008 2026

키워드

언어

전체 172건 중 151번부터 160번까지의 결과를 표시합니다.

2011
Article

Effects of Body Doping in a NAND Flash String without Source/Drain

  • 2011-11
  • Japanese Journal of Applied Physics
  • IOP PUBLISHING LTD
Article

AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter

  • Kim, Dae-Hwan ; 
  • Kong, Dongsik ; 
  • Kim, Sungchul ; 
  • Jeon, Young Woo ; 
  • Kim, Yongsik ; 
  • ... Kwon, Hyuck-In ; 
  • 외 1명
  • 2011-09
  • Japanese Journal of Applied Physics
  • IOP PUBLISHING LTD
Article

Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

  • Lee, J.-K. ; 
  • Chung, H.-J. ; 
  • Heo, J. ; 
  • Seo, S. ; 
  • Cho, I.H. ; 
  • ... Kwon, Hyuck-In ; 
  • 외 1명
  • 2011-05
  • Applied Physics Letters
  • AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Article

Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories

  • Lee, J.-K. ; 
  • Lee, J.-W. ; 
  • Park, J. ; 
  • Chung, S.-W. ; 
  • Roh, J.S. ; 
  • ... Kwon, Hyuck-In ; 
  • 외 3명
  • 2011-04
  • Applied Physics Letters
  • AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
2010
Article

Analytic Oxide Capacitance Model of Double- and Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors in Linear Region by Considering Inversion-Layer Capacitance

  • 2010-10
  • Japanese Journal of Applied Physics
  • JAPAN SOC APPLIED PHYSICS
Article

Impact of High-k HfO2 Dielectric on the Low-Frequency Noise Behaviors in Amorphous InGaZnO Thin Film Transistors

  • Park, Jae Chul ; 
  • Kim, Sun Il ; 
  • Kim, Chang Jung ; 
  • Kim, Sungchul ; 
  • Kim, Dae Hwan ; 
  • ... Kwon, Hyuck-In ; 
  • 외 1명
  • 2010-10
  • Japanese Journal of Applied Physics
  • JAPAN SOC APPLIED PHYSICS
Article

Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation

  • Park, Jae Chul ; 
  • Kim, Sang Wook ; 
  • Kim, Chang Jung ; 
  • Kim, Sungchul ; 
  • Kim, Dae Hwan ; 
  • ... Kwon, Hyuck-In ; 
  • 외 1명
  • 2010-09
  • Applied Physics Letters
  • AMER INST PHYSICS
Article

Electrical instabilities and low-frequency noise in InGaZnO thin film transistors

  • Lee, J.-H. ; 
  • Kwon, Hyuck-In ; 
  • Shin, H. ; 
  • Park, B.-G. ; 
  • Park, Y.J.
  • 2010-07
  • Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Article

Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in NAND Flash Memory Strings

  • Joe, Sung-Min ; 
  • Yi, Jeong-Hyong ; 
  • Park, Sung-Kye ; 
  • Kwon, Hyuck-In ; 
  • Lee, Jong-Ho
  • 2010-07
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

3-D stacked active layers and vertical gate NAND flash string with single-crystal Si channel by adopting Si/sige selective etch process

  • Lee, J.-W. ; 
  • Jeong, M.-K. ; 
  • Kwon, Hyuck-In ; 
  • Park, B.-G. ; 
  • Shin, H. ; 
  • 외 1명
  • 2010-06
  • 2010 Silicon Nanoelectronics Workshop, SNW 2010